Description

• Parameters: 6A700V
• Description: SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. Download the latest E
• Features: 6A,700V, R DS(on)(typ.) =1.35 W @VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
• Applications: Energy, Motor Drive
• Voltage: 700V
• Current: 6A