Description

• Parameters: 129A40V
• Description: SVG042R1NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silans LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS and Power Management for Inverter Systems. Download the latest English version SVG042R1NL5 SVG042R1NL5 Datasheet_1.0
• Features: 129A, 40V, R DS(on)(typ.) =1.6m W @V GS =10V Low gate charge Low Crss
• Applications: Inverter
• Voltage: 40V
• Current: 129A