Description

• Parameters: 120A90V
• Description: SVG095R5NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silans LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems. Download the latest English version SVG095R5NT Datasheet_1.2 最小包装数量 1000 颗
• Features: 120A, 90V, R DS(on)(typ.) =4.6m W @V GS =10V Low gate charge Low Crss
• Applications: Inverter
• Voltage: 90V
• Current: 120A