Description

• Parameters: 2.6A100V
• Description: SVG10111NA6 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silans LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS and Power Management for Inverter Systems. Download the latest English version SVG10111NA6 SVG10111NA6 Datasheet_1.0
• Features: 2.6A, 100V, R DS(on)(typ.) =85m W @V GS =10V Low gate charge Low Crss
• Applications: Inverter
• Voltage: 100V
• Current: 2.6A