Description

• Parameters: 11A600V
• Description: SVS11NF60DD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. Download the latest English version SVS11NF60DD2 SVS11NF60DD2 Datasheet_1.0 最小包装数量 20 颗
• Features: 11A,600V,R DS(on)(typ.) =0.31Ω@V GS =10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability
• Applications: General Purpose
• Voltage: 600V
• Current: 11A