Description

• Parameters: 24A650V
• Description: SVS24N65FJDD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example. it is suitable for hard and soft switching topologies. Download the latest English version SVS24N65FJDD2 SVS24N65FJDD2 Datasheet_1.0 TO-220FJD-3L
• Features: 24A, 650V, R DS(on)(typ.) =0.16 W @V GS =10V New revolutionary high voltage technology Ultra low gate charge
• Applications: General Purpose
• Voltage: 650V
• Current: 24A