Description

• Parameters: 180A30V
• Description: The SVT033R5NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silans LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems. Download the latest English version SVT033R5NT Datasheet_1.2 最小包装数量 1000 颗
• Features: 180A, 30V, R DS(on)(typ.) =2.8m W @V GS =10V Low gate charge Low Crss
• Applications: Inverter
• Voltage: 30V
• Current: 180A