Description

• Parameters: 8.5A40V
• Description: SVT09N04SA is an N-channel enhancement mode power MOS field effect transistor which is produced using Trench Mos technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in UPS, DC-DC converters. Download the latest English version SVT09N04SA Datasheet_1.2
• Features: 8.5A, 40V, R DS(on)(typ.) =15.5m W @V GS =10V Low gate charge Low Crss
• Applications: Energy
• Voltage: 40V
• Current: 8.5A