Description

• BlockingVoltage(V): 650
• CurrentRating(A): 6
• Generation: Gen5
• ForwardVoltageVF（V）: 1.3
• ReverseleakagecurrentIR（uA）: 0.5
• ForwardsurgecurrentIFSM(A): 60
• TotalCapacitiveChargeQC(nC): 21.5
• TotalPowerDissipationPTOT(W): 67
• ThermalresistanceRthJ-C(°C/W): 2.22
• Yangjie YJD106506DYG5 SiC Schottky Diode in TO-252/DPAK package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 650
• CurrentRating(A): 6
• Generation: Gen5
• ForwardVoltageVF（V）: 1.3
• ReverseleakagecurrentIR（uA）: 0.5
• ForwardsurgecurrentIFSM(A): 60
• TotalCapacitiveChargeQC(nC): 21.5
• TotalPowerDissipationPTOT(W): 67
• ThermalresistanceRthJ-C(°C/W): 2.22