Description

• BlockingVoltage(V): 650
• CurrentRating(A): 10
• Generation: Gen4
• ForwardVoltageVF（V）: 1.35
• ReverseleakagecurrentIR（uA）: 0.2
• ForwardsurgecurrentIFSM(A): 75
• TotalCapacitiveChargeQC(nC): 31
• TotalPowerDissipationPTOT(W): 107
• ThermalresistanceRthJ-C(°C/W): 1.39
• Yangjie YJD106510BYG4 SiC Schottky Diode in TO-263/D2PAK package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 650
• CurrentRating(A): 10
• Generation: Gen4
• ForwardVoltageVF（V）: 1.35
• ReverseleakagecurrentIR（uA）: 0.2
• ForwardsurgecurrentIFSM(A): 75
• TotalCapacitiveChargeQC(nC): 31
• TotalPowerDissipationPTOT(W): 107
• ThermalresistanceRthJ-C(°C/W): 1.39