Description

• BlockingVoltage(V): 650
• CurrentRating(A): 10
• Generation: Gen4
• ForwardVoltageVF（V）: 1.35
• ReverseleakagecurrentIR（uA）: 0.5
• ForwardsurgecurrentIFSM(A): 75
• TotalCapacitiveChargeQC(nC): 31
• TotalPowerDissipationPTOT(W): 66
• ThermalresistanceRthJ-C(°C/W): 2.25
• Yangjie YJD106510PSYG4 SiC Schottky Diode in TO-220IS-2L package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 650
• CurrentRating(A): 10
• Generation: Gen4
• ForwardVoltageVF（V）: 1.35
• ReverseleakagecurrentIR（uA）: 0.5
• ForwardsurgecurrentIFSM(A): 75
• TotalCapacitiveChargeQC(nC): 31
• TotalPowerDissipationPTOT(W): 66
• ThermalresistanceRthJ-C(°C/W): 2.25