Description

• BlockingVoltage(V): 650
• CurrentRating(A): 20
• Generation: Gen4
• ForwardVoltageVF（V）: 1.38
• ReverseleakagecurrentIR（uA）: 0.5
• ForwardsurgecurrentIFSM(A): 130
• TotalCapacitiveChargeQC(nC): 61
• TotalPowerDissipationPTOT(W): 150
• ThermalresistanceRthJ-C(°C/W): 1
• Yangjie YJD106520DXYG4Q Automotive SiC Schottky Diode in TO-252/DPAK package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 650
• CurrentRating(A): 20
• Generation: Gen4
• ForwardVoltageVF（V）: 1.38
• ReverseleakagecurrentIR（uA）: 0.5
• ForwardsurgecurrentIFSM(A): 130
• TotalCapacitiveChargeQC(nC): 61
• TotalPowerDissipationPTOT(W): 150
• ThermalresistanceRthJ-C(°C/W): 1