Description

• BlockingVoltage(V): 1200
• CurrentRating(A): 120
• Generation: Gen4
• ForwardVoltageVF（V）: 1.45
• ReverseleakagecurrentIR（uA）: 1
• ForwardsurgecurrentIFSM(A): 720
• TotalCapacitiveChargeQC(nC): 663
• TotalPowerDissipationPTOT(W): 1153
• ThermalresistanceRthJ-C(°C/W): 0.13
• Yangjie YJD1120120NSYG4 SiC Schottky Diode in TO-247PLUS-2L package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 1200
• CurrentRating(A): 120
• Generation: Gen4
• ForwardVoltageVF（V）: 1.45
• ReverseleakagecurrentIR（uA）: 1
• ForwardsurgecurrentIFSM(A): 720
• TotalCapacitiveChargeQC(nC): 663
• TotalPowerDissipationPTOT(W): 1153
• ThermalresistanceRthJ-C(°C/W): 0.13