Description

• BlockingVoltage(V): 1200
• CurrentRating(A): 60
• Generation: Gen4
• ForwardVoltageVF（V）: 1.36
• ReverseleakagecurrentIR（uA）: 0.5
• ForwardsurgecurrentIFSM(A): 235
• TotalCapacitiveChargeQC(nC): 173
• TotalPowerDissipationPTOT(W): 577
• ThermalresistanceRthJ-C(°C/W): 0.26
• Yangjie YJD112060NCTYG4 SiC Schottky Diode in TO-247AB package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 1200
• CurrentRating(A): 60
• Generation: Gen4
• ForwardVoltageVF（V）: 1.36
• ReverseleakagecurrentIR（uA）: 0.5
• ForwardsurgecurrentIFSM(A): 235
• TotalCapacitiveChargeQC(nC): 173
• TotalPowerDissipationPTOT(W): 577
• ThermalresistanceRthJ-C(°C/W): 0.26