Description

• BlockingVoltage(V): 650
• CurrentRating(A): 60
• Generation: GH
• Rdson(mΩ)@25℃: 50
• GateChargeTotalQg（nC）: 121
• OutputCapacitanceCoss(pF): 208
• TotalPowerDissipationPTOT(W): 250
• ThermalresistanceRthJ-C(°C/W): 0.6
• MaximumJunctionTemperature（℃）: 175
• Yangjie YJD206550PGH SiC MOSFET Single Transistor in TO-220-3L package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 650
• CurrentRating(A): 60
• Generation: GH
• Rdson(mΩ)@25℃: 50
• GateChargeTotalQg（nC）: 121
• OutputCapacitanceCoss(pF): 208
• TotalPowerDissipationPTOT(W): 250
• ThermalresistanceRthJ-C(°C/W): 0.6
• MaximumJunctionTemperature（℃）: 175