Description

• BlockingVoltage(V): 1200
• CurrentRating(A): 18.5
• Generation: Gen3
• Rdson(mΩ)@25℃: 155
• GateChargeTotalQg（nC）: 36
• OutputCapacitanceCoss(pF): 35
• TotalPowerDissipationPTOT(W): 98
• ThermalresistanceRthJ-C(°C/W): 1.53
• MaximumJunctionTemperature（℃）: 175
• Yangjie YJD2120160B7YG3 SiC MOSFET Single Transistor in TO-263-7L package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 1200
• CurrentRating(A): 18.5
• Generation: Gen3
• Rdson(mΩ)@25℃: 155
• GateChargeTotalQg（nC）: 36
• OutputCapacitanceCoss(pF): 35
• TotalPowerDissipationPTOT(W): 98
• ThermalresistanceRthJ-C(°C/W): 1.53
• MaximumJunctionTemperature（℃）: 175