Description

• BlockingVoltage(V): 1200
• CurrentRating(A): 80
• Generation: Gen3
• Rdson(mΩ)@25℃: 24
• GateChargeTotalQg（nC）: 152
• OutputCapacitanceCoss(pF): 160
• TotalPowerDissipationPTOT(W): 365
• ThermalresistanceRthJ-C(°C/W): 0.41
• MaximumJunctionTemperature（℃）: 175
• Yangjie YJD212025NCFYG3 SiC MOSFET Single Transistor in TO-247-4L package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 1200
• CurrentRating(A): 80
• Generation: Gen3
• Rdson(mΩ)@25℃: 24
• GateChargeTotalQg（nC）: 152
• OutputCapacitanceCoss(pF): 160
• TotalPowerDissipationPTOT(W): 365
• ThermalresistanceRthJ-C(°C/W): 0.41
• MaximumJunctionTemperature（℃）: 175