Description

• BlockingVoltage(V): 1200
• CurrentRating(A): 11
• Generation: Gen3
• Rdson(mΩ)@25℃: 290
• GateChargeTotalQg（nC）: 19.8
• OutputCapacitanceCoss(pF): 25.6
• TotalPowerDissipationPTOT(W): 92.6
• ThermalresistanceRthJ-C(°C/W): 2.11
• MaximumJunctionTemperature（℃）: 175
• Yangjie YJD2120320B7YG3 SiC MOSFET Single Transistor in TO-263-7L package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 1200
• CurrentRating(A): 11
• Generation: Gen3
• Rdson(mΩ)@25℃: 290
• GateChargeTotalQg（nC）: 19.8
• OutputCapacitanceCoss(pF): 25.6
• TotalPowerDissipationPTOT(W): 92.6
• ThermalresistanceRthJ-C(°C/W): 2.11
• MaximumJunctionTemperature（℃）: 175