Description

• BlockingVoltage(V): 1200
• CurrentRating(A): 65
• Generation: G3M
• Rdson(mΩ)@25℃: 40
• GateChargeTotalQg（nC）: 90
• OutputCapacitanceCoss(pF): 85
• TotalPowerDissipationPTOT(W): 288
• ThermalresistanceRthJ-C(°C/W): 0.52
• MaximumJunctionTemperature（℃）: 175
• Yangjie YJD212040NCFYG3M SiC MOSFET Single Transistor in TO-247-4L package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 1200
• CurrentRating(A): 65
• Generation: G3M
• Rdson(mΩ)@25℃: 40
• GateChargeTotalQg（nC）: 90
• OutputCapacitanceCoss(pF): 85
• TotalPowerDissipationPTOT(W): 288
• ThermalresistanceRthJ-C(°C/W): 0.52
• MaximumJunctionTemperature（℃）: 175