Description
• BlockingVoltage(V): 1200
• CurrentRating(A): 35
• Generation: Gen3
• Rdson(mΩ)@25℃: 70
• GateChargeTotalQg(nC): 64.2
• OutputCapacitanceCoss(pF): 71
• TotalPowerDissipationPTOT(W): 175
• ThermalresistanceRthJ-C(°C/W): 0.85
• MaximumJunctionTemperature(℃): 175
• Yangjie YJD212080NCFYG3 SiC MOSFET Single Transistor in TO-247-4L package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 1200
• CurrentRating(A): 35
• Generation: Gen3
• Rdson(mΩ)@25℃: 70
• GateChargeTotalQg(nC): 64.2
• OutputCapacitanceCoss(pF): 71
• TotalPowerDissipationPTOT(W): 175
• ThermalresistanceRthJ-C(°C/W): 0.85
• MaximumJunctionTemperature(℃): 175
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