1. SiC Technology Advantages
Ten times higher electric field breakdown strength; Three times higher thermal conductivity; Significantly lower switching losses; Higher junction temperature capability; Faster switching enables higher frequency operation
2. SiC Device Types
StarPower offers multiple SiC device types to address different power conversion needs.
Comparison Table
| Device Type | Voltage Range | Key Advantage | Best Applications |
|---|---|---|---|
| SiC Schottky Diode | 600V – 3300V | Zero Qrr | PFC, LLC, flyback |
| SiC MOSFET | 650V – 3300V | Low Rds(on) + fast switch | EV chargers, inverters |
| SiC Module | 1200V – 3300V | Integrated half-bridge/full bridge | Traction, solar inverters |
| SiC Diode Module | 1200V – 3300V | High-current rectifier | High-frequency power supply |
SiC Schottky Diodes
Silicon carbide Schottky barrier diodes offer near-zero reverse recovery charge.
• Zero reverse recovery charge (Qrr); Temperature-independent switching; Available from 600V to 3300V+; Ideal for PFC and LLC circuits
SiC MOSFETs
SiC MOSFETs combine high voltage blocking with fast switching and low on-resistance.
• Normally-off operation (like silicon MOSFET); Low on-resistance Rds(on); High-frequency switching capability; Used in inverters and DC-DC converters
3. Application Advantages
SiC devices enable system-level benefits beyond simple device replacement.
Energy Efficiency
Lower switching and conduction losses directly translate into reduced energy consumption.
• Higher power supply efficiency (98%+ achievable); Reduced cooling requirements; Lower operating costs; Smaller carbon footprint
System Size Reduction
Higher switching frequencies allow smaller passive components.
• Smaller magnetics (inductors, transformers); Reduced capacitor size and count; Smaller heatsinks; Higher power density designs
4. Key Applications
SiC devices are rapidly adopted across several high-growth markets.
• Electric vehicle chargers and traction inverters; Solar photovoltaic inverters; Server and telecom power supplies; Industrial motor drives; Energy storage systems; Uninterruptible power supplies (UPS)
5. Find the Right Solution for Your Application
Ready to push your power conversion efficiency and density to the next level? Explore Silicon Carbide MOSFET and diode offerings designed for high-performance, high-efficiency power electronic systems.
6. Frequently Asked Questions
1：What are the key benefits of SiC devices over silicon?
SiC devices offer significantly lower switching losses enabling much higher switching frequencies in the megahertz range versus kilohertz for silicon, lower conduction losses at high currents and temperatures, higher junction temperature capability up to 200 degrees Celsius and above, and higher breakdown field strength allowing thinner, lower-resistance drift regions. These benefits enable smaller magnetics, smaller heat sinks, higher power density, and higher overall system efficiency.
2：Are SiC MOSFETs drop-in replacements for silicon IGBTs?
Generally no, SiC MOSFETs are not direct drop-in replacements for IGBTs. Key differences include different gate drive voltage requirements, typically 0 to positive 15V for SiC versus plus and minus 15V for many IGBTs, different short-circuit withstand time which is shorter for SiC requiring faster protection, different switching characteristics requiring layout and snubber optimization, and different body diode behavior with SiC MOSFET body diodes having higher forward voltage and recovery. However, SiC can replace IGBTs in many applications with appropriate design modifications.
3：When does the higher cost of SiC devices justify the investment?
SiC is justified when system efficiency improvements directly reduce energy costs in high duty-cycle applications like server power supplies, EV chargers, and solar inverters, when higher switching frequency enables significant reduction in magnetics size and cost in high-frequency designs, when thermal constraints make silicon solutions impractical in high ambient temperature or limited cooling environments, or where power density requirements cannot be met with silicon technology. Perform a total cost of ownership analysis including energy savings, cooling savings, and size and weight benefits.
