Description

• BlockingVoltage(V): 1200
• CurrentRating(A): 137
• Generation: G3M
• Rdson(mΩ)@25℃: 13
• GateChargeTotalQg（nC）: 246
• OutputCapacitanceCoss(pF): 244
• TotalPowerDissipationPTOT(W): 500
• ThermalresistanceRthJ-C(°C/W): 0.3
• MaximumJunctionTemperature（℃）: 175
• Yangjie YJD212013NCFYG3M SiC MOSFET Single Transistor in TO-247-4L package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 1200
• CurrentRating(A): 137
• Generation: G3M
• Rdson(mΩ)@25℃: 13
• GateChargeTotalQg（nC）: 246
• OutputCapacitanceCoss(pF): 244
• TotalPowerDissipationPTOT(W): 500
• ThermalresistanceRthJ-C(°C/W): 0.3
• MaximumJunctionTemperature（℃）: 175