Description

• Description: SiC MOSFET 1200 V and 9 mOhm Rdson
• Voltage: 1200 V
• Rds_On: 9 mOhm
• Technology: SiC
• Generation: m24

• Feature: SCS0009C120m24 SwissSEM SiC MOSFET for power module…
• Drain-source voltage: 1200 V
• R DS(on) (I D = 100 A, V GS = 18 V, T vj = 25°C): 9 mOhm
• Length: 5.2 mm
• Width: 6.0 mm