Description

• Description: EVD-Type three-phase 1.2kV Si-IGBT automotive power-module
• Voltage: 1200 V
• Current: 600 A
• Technology: Si
• Generation: i25

• Feature: SISS0600EVD120i25 – SwissSEM Si-IGBT three-phase power
• V CES (at T j = 25°C): 1200 V
• Max. junction operating temperature: 175 °C
• V CEsat at T vj = 150 °C: 1.6 V
• E off (at V CC = 600 V, I C = 600 A, R G = TBD, V GE = 15 V, L s = 35 inductive load, T j = 150°C): 59 mJ
• E on (at V CC = 600 V, I C = 600 A, R G = TBD, V GE = 15 V, L s = 35 inductive load, T j = 150°C): 49 mJ
• Forward voltage V F (I F = 450A, T vj = 150 °C): 1.9 V
• E rec (at V CC = 600 V, I C = 600 A, R G = TBD, V GE = 15 V, L s = 35 inductive load, T j = 150°C): 32 mJ
• Thermal resistance junction to fluid (Per switch, Coolant 50% glycol, 50% water, 10 l/min, dp < 90 mbar): 0.11 K/W • Module stray inductance (per switch): 8.5 nH • Clearance distance in air (terminal to base and terminal to terminal): 4.5 mm • Surface creepage distance (terminal to base and terminal to terminal): 9.0 mm • Mass: 720 g