Description

• Description: FP-type three-level IGBT power module
• Voltage: 1050 V
• Current: 650 A
• Technology: Si
• Generation: i23

• Note: SiC SBD
• Feature: SIST0650FP105i23_A02 – SwissSEM FP-type three-level IGBT…
• Collector-emitter voltage: 1050 V
• Implemented DC collector current T1 – T4: 650 A
• Max. junction operating temperature: 175 °C
• IGBT thermal resistance junction to case R th(j-c)_IGBT T1 – T4: 0.074 K/W
• Diode thermal resistance junction to case R th(j-c)_Diode D1 & D4: 0.145 K/W
• Diode thermal resistance junction to case R th(j-c)_Diode D2 & D3: 0.132 K/W
• Diode thermal resistance junction to case R th(j-c)_Diode D5 & D6: 0.193 K/W
• IGBT thermal resistance case to heatsink R th(c-s)_IGBT per switch T1 – T4: 0.030 K/W
• Diode thermal resistance case to heatsink R th(c-s)_Diode per switch D1 – D4: 0.045 K/W
• Diode thermal resistance case to heatsink R th(c-s)_Diode per switch D5 & D6: 0.065 K/W
• L x W x H: 113 x 62 x 17.3 mm³
• Mass: 250 g