Description

• Description: BEVD-Type three-phase 1.2kV IGBT module
• Voltage: 1200 V
• Current: 500 A
• Technology: Si
• Status: Production
• Feature: SISS0500BEVD120i20 – SwissSEM Si-IGBT three-phase power
• Collector-emitter voltage: 1200 V
• DC collector current: 500 A
• Max. junction operating temperature: 175 °C
• Collector emitter saturation voltage (at T j = 125°C): 1.95 V
• Turn-off switching energy (V CC = 600 V, I D = 500 A, R G = 2 Ω, V GE = ±15 V, L s = 30 nH, inductive load, T j = 125°C): 70 mJ
• Turn-on switching energy (V CC = 600 V, I D = 500 A, R G = 1 Ω, V GE = ±15 V, L s = 30 nH, inductive load, T j = 125°C): 56 mJ
• Forward voltage (I F = 500 A, T j = 125°C): 2.15 V
• Reverse recovery energy (E rec = 600 V, I F = 500 A, dI/dt = 8.34 kA/µs (175°C), R G = 1 Ω, V GE = ±15 V, L s = 30 nH, inductive load, T j = 125°C): 37 mJ
• Thermal resistance junction to fluid (Per switch, Coolant 50% glycol, 50% water, 10 l/min, dp < 90 mbar): 0.11 K/W • Module stray inductance (per switch): 12 nH • Clearance distance in air (terminal to base and terminal to terminal): 4.5 mm • Surface creepage distance (terminal to base and terminal to terminal): 9.0 mm • Mass: 700 g