Description

• Description: SiC MOSFET 2300 V and 30 mOhm Rdson
• Voltage: 2300 V
• Rds_On: 30 mOhm
• Technology: SiC
• Generation: m23

• Note: in development
• Feature: SCS0030C230m23 SwissSEM SiC MOSFET for power module…
• Drain-source voltage: 2300 V
• R DS(on) (I D = 80 A, V GS = 18 V, T vj = 25°C): 30 mOhm
• Length: 5.0 mm
• Width: 5.0 mm