Description
• Description: SiC Schottky Barrier diode 1200 V
• Voltage: 1200 V
• Technology: SiC
• Generation: s24
• Note: Schottky-Barrier-Diode
• Feature: SCD0060C120s24 SwissSEM SiC Schottky Barrier Diode
• Repetitive peak reverse voltage: 1200 V
• Continuous forward current: 60 A
• Length: 4.66 mm
• Width: 4.65 mm




Reviews
There are no reviews yet.