Description
• Description: 4th Generation 650V/6A SiC Schottky Barrier Diode
• Voltage: 650 V
• Current: 6 A
• Technology: SiC
• Generation: s23
• Feature: SCD006TM065S23F SwissSEM SiC Schottky Barrier Diode
• Feature: TO220N-2L SCD006TM065S23F
• Repetitive peak reverse voltage: 650 V
• Continuous forward current: 8 A




Reviews
There are no reviews yet.