Description

• Description: SiC MOSFET 750 V and 9 mOhm Rdson
• Voltage: 750 V
• Rds_On: 9 mOhm
• Technology: SiC
• Generation: m22

• Feature: SCS0009C075m22 SwissSEM SiC MOSFET for power module…
• Drain-source voltage: 750 V
• R DS(on) (I D = 80 A, V GS = 18 V, T vj = 25°C): 9 mOhm
• Length: 5 mm
• Width: 5 mm