Description

• Description: m22 Generation 1200V SiC MOSFET (n-channel enhancement)- TO-247-4LB
• Voltage: 1200 V
• Rds_On: 14 mOhm
• Technology: SiC
• Generation: m24

• Feature: SCS014HG120M24F SwissSEM m24 1200V Silicon Carbide power
• Feature: TO247N-4LB SCS014HG120M24F
• Drain source voltage: 1200 V
• Drain-source on-state resistance (I D = 100 A, V GS = 18V, T vj = 25 °C): 14 mOhm