Description

• Description: m22 Generation 650V SiC MOSFET (n-channel enhancement)- TO-247-4LB
• Voltage: 650 V
• Rds_On: 27 mOhm
• Technology: SiC
• Generation: m22
• Status: Sample
• Feature: SCS027HG065M22E SwissSEM 650V Silicon Carbide Power MOSFET
• Feature: TO247N-4LB SCS027HG065M22E
• Drain source voltage: 650 V
• Drain-source on-state resistance (I D = 30 A, V GS = 18V, T vj = 27 m Ohm): 27 mOhm