Description

• Description: XP-Type phase leg SiC MOSFET module
• Voltage: 2300 V
• Current: 2000 A
• Rds_On: 1.1 mOhm
• Technology: Si
• Generation: m23
• Status: Sample
• Feature: SCSD0011XP230m23 – SwissSEM XP-type phase-leg SiC-MOSFET…
• Drain-source breakdown voltage V (BR)DSS: 2300 V
• Continuous drain and source current: 1350 A
• Max. junction operating temperature: 175 °C
• Static drain-source on-state resistance R DSon (I D = 2000A, V GS = 18V, T vj = 25°C): 1.1 mOhm
• Turn-off switching energy – E off (V CC = 1500V, I D = 2000A, R G = Ohm, V GS = -5V/+18V, T vj = 125°C): 400 mJ
• Turn-on switching energy – E on (V CC = 1500V, I C = 2000A, R G = Ohm, V GS =-5V/+18V, T vj = 125°C): 470 mJ
• Drain-source reverse voltage – V DS (I D = -2000A, V GS = -5V, T vj = 25°C): 5.5 V
• MOSFET Forward Recover Energy – E rr (V R = 1500V, I D = 2000A, R G = Ohm, V GS = -5/+18V, T vj = 125°C): mJ
• Thermal resistance junction to case R th(j-c): 0.018 K/W
• Thermal resistance case to heatsink R th(c-s): 0.012 K/W
• L x W x H: 140 x 100 x 40 mm³
• Mass: 1100 g