Description

• Description: HEEV phase leg SiC module
• Voltage: 1200 V
• Current: 600 A
• Rds_On: 2 mOhm
• Technology: SiC
• Generation: m23

• Feature: SCSS002HEEV120mS – SwissSEM SiC MOSFET molded power module
• V DSS (at T j = 25°C): 1200 V
• V GSS: -10 to +22 V
• Max. junction operating temperature: 175 °C
• r DSon (at T j = 25°C): 2.05 mOhm
• r DSon (at T j = 150°C): 3.8 mOhm
• Turn-off switching energy (V CC = 800 V, I D = 520 A, R G = 3 Ω, V GS = -4 / +18 V, L s = 20 nH, inductive load, T j = 175°C): 20 mJ
• Turn-on switching energy (V CC = 800 V, I D = 520 A, R G = 3 Ω, V GS = -4 / +18 V, L s = 20 nH, inductive load, T j = 175°C): 13 mJ
• Forward voltage (I D = -500 A, V GS = 18 V, T j = 25°C): 1 V
• Peak reverse recovery current (V R = 800 V, I SD = 500 A, dI/dt = 15 kA/µs, R G = 3 Ω, V GS = -4 / +18 V, L s = 20 nH, inductive load, T j = 175°C): 10.9 mJ
• Thermal resistance junction to fluid (Per switch, Coolant 50% glycol, 50% water, 10 l/min, dp < 90 mbar, three modules): 0.110 K/W • Module stray inductance (per switch): 4.5 nH • Clearance distance in air (terminal to base): 7.1 mm • Clearance distance in air (terminal to terminal): 4.0 mm • Surface creepage distance (terminal to base and terminal to terminal): 8.0 mm • Mass: 65 g