Description

• Description: Silicon IGBT 1750 V and 100 A rated current
• Voltage: 1700 V
• Current: 100 A
• Technology: Si
• Generation: i20
• Status: Production
• Note: 200 mm wfr-frame
• Feature: SIS0100C175i20 SwissSEM IGBT die for power module assembly
• Collector-emitter voltage: 1700 V
• DC collector current: 100 A
• Length: 10.1 mm
• Width: 10.1 mm