Description
• Description: Silicon IGBT 1200 V and 200 A rated current
• Voltage: 1200 V
• Current: 200 A
• Technology: Si
• Generation: i25
• Status: Production
• Note: 300 mm wfr-frame
• Feature: SIS0200C120i25 SwissSEM IGBT die for power module assembly
• Collector-emitter voltage: 1200 V
• DC collector current: 200 A
• Length: 11 mm
• Width: 9.7 mm




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