Description
• Description: Silicon IGBT 1200 V and 250 A rated current
• Voltage: 1200 V
• Current: 250 A
• Technology: Si
• Generation: i20
• Status: Production
• Note: 300 mm wfr-frame
• Feature: SIS0250C120i20 SwissSEM IGBT die for power module assembly
• Collector-emitter voltage: 1200 V
• DC collector current: 250 A
• Length: 12.1 mm
• Width: 15.7 mm




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