Description

• Description: ST-type phase leg IGBT module
• Voltage: 1200 V
• Current: 200 A
• Technology: Si
• Generation: i20
• Status: Production
• Feature: SISD0200ST120i20_A01 – SwissSEM IGBT power module – dual /…
• Collector-emitter voltage: 1200 V
• DC collector current: 200 A
• Max. junction operating temperature: 175 °C
• Collector emitter saturation voltage (T vj = 125°C): 2.05 V
• Turn-off energy (V CC = 600 V, I C = 200 A, R G = 2 Ω, V GE = ± 15 V, L s = 35 nH, inductive load, T vj = 125°C): 27 mJ
• Turn-on energy (V CC = 600 V, I C = 200 A, R G = 5.5 Ω, V GE = ± 15 V, L s = 35 nH, inductive load, T vj = 125°C): 24 mJ
• Forward voltage drop (T vj = 125°C): 1.85 V
• Reverse recovery (V R = 600 V, I F = 200 A, dI/dt = 4700 A/µs, R G = 2 Ω, V GE = ± 15 V, L s = 35 nH, inductive load, T vj = 125°C): 10 mJ
• IGBT thermal resistance junction to case R th(j-c)_IGBT: 0.136 K/W
• Diode thermal resistance junction to case R th(j-c)_Diode: 0.208 K/W
• IGBT thermal resistance case to heatsink R th(c-s)_IGBT per switch: 0.042 K/W
• Diode thermal resistance case to heatsink R th(c-s)_Diode per switch: 0.047 K/W
• L x W x H: 106 x 62 x 30.9 mm³
• Clearance distance terminal to base: 23 mm
• Clearance distance terminal to terminal: 11 mm
• Surface creepage distance terminal to base: 29 mm
• Surface creepage distance terminal to terminal: 23 mm
• Mass: 310 g