Description

• Description: XP-type phase-leg IGBT power module
• Voltage: 1700 V
• Current: 1800 A
• Technology: Si
• Generation: i23

• Feature: SISD1800XP170i23 – SwissSEM XP-type phase-leg IGBT power
• Collector-emitter voltage: 1700 V
• DC collector current: 1800 A
• Max. junction operating temperature: 175 °C
• Collector(-emitter) breakdown voltage V CEsat (I C = 1800A, V GS = 15V, T vj = 25°C): 1.75 V
• Turn-off switching energy – Eoff (V CC = 900V, I C = 1800A, R G = 0.5 Ohm, V GS = +/-15V, T vj = 125°C): 560 mJ
• Turn-on switching energy – Eon (V CC = 900V, I C = 1800A, R G = 0.5 Ohm, V GS = +/-15V, T vj = 125°C): 510 mJ
• Forward voltage V F (I C = 1800A, T vj = 25°C): 2 V
• Reverse Recover Energy – Err (V CC = 900V, I C = 1800A, R G = 0.5 Ohm, V GS = +/-15V, T vj = 125°C): 280 mJ
• IGBT thermal resistance junction to case R th(j-c)_IGBT: 0.016 K/W
• Diode thermal resistance junction to case R th(j-c)_Diode: 0.027 K/W
• IGBT thermal resistance junction to case R th(c-s)_IGBT: 0.0144 K/W
• Diode thermal resistance junction to case R th(c-s)_Diode: 0.0172 K/W
• L x W x H: 140 x 100 x 40 mm³
• Mass: 1100 g