Description

• Description: Silicon IGBT 1200 V and 200 A rated current with i21-Technology
• Voltage: 1200 V
• Current: 200 A
• Technology: Si
• Generation: i21
• Status: Production
• Note: 300 mm wfr-frame
• Collector-emitter voltage: 1200 V
• DC collector current: 200 A
• Length: 12.8 mm
• Width: 12.1 mm